Invention Grant
US09111595B2 Memory device with tracking wordline voltage level circuit and method
有权
具有跟踪字线电压电平电路和方法的存储器件
- Patent Title: Memory device with tracking wordline voltage level circuit and method
- Patent Title (中): 具有跟踪字线电压电平电路和方法的存储器件
-
Application No.: US13904653Application Date: 2013-05-29
-
Publication No.: US09111595B2Publication Date: 2015-08-18
- Inventor: Yu-Hao Hsu , Ming-Chien Tsai , Chen-Lin Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C7/06 ; G11C7/12 ; G11C11/419 ; G11C29/50 ; G11C29/52

Abstract:
A memory includes a clock generator for providing a first clock signal responsive to a second clock signal and a feedback signal. A feedback loop provides the feedback signal and includes a tracking wordline, a tracking bitline, a tracking bit cell, and a tracking wordline driver for driving the tracking wordline responsive to the first clock signal. The memory includes a tracking wordline level tuner for reducing a voltage level of a tracking wordline signal on the tracking wordline responsive to a weak bit control signal.
Public/Granted literature
- US20140269141A1 WORDLINE DOUBLER Public/Granted day:2014-09-18
Information query