Invention Grant
- Patent Title: Sputtering method and apparatus
- Patent Title (中): 溅射方法和装置
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Application No.: US12197902Application Date: 2008-08-25
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Publication No.: US09111732B2Publication Date: 2015-08-18
- Inventor: Takamichi Fujii , Takayuki Naono
- Applicant: Takamichi Fujii , Takayuki Naono
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2007-225826 20070831
- Main IPC: C23C14/00
- IPC: C23C14/00 ; H01J37/34 ; B41J2/16 ; C23C14/08 ; H01L41/316

Abstract:
The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.
Public/Granted literature
- US20090057135A1 SPUTTERING METHOD AND APPARATUS Public/Granted day:2009-03-05
Information query
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