Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14098176Application Date: 2013-12-05
-
Publication No.: US09111762B2Publication Date: 2015-08-18
- Inventor: Myoung Sub Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR10-2013-0106931 20130906
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/265 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L29/08
Abstract:
A semiconductor device includes a semiconductor substrate, a plurality of pillars vertically extending from the semiconductor substrate, each pillar including a groove formed in an upper surface thereof, a salicide layer formed to cover the upper surface and a lateral circumference of an upper end of each pillar and a lower electrode formed to cover an upper surface and a lateral surface of the salicide layer.
Public/Granted literature
- US20150069582A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
IPC分类:
