Invention Grant
- Patent Title: Method for fabricating a phase-change memory cell
- Patent Title (中): 相变存储单元的制造方法
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Application No.: US13132603Application Date: 2008-12-30
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Publication No.: US09111856B2Publication Date: 2015-08-18
- Inventor: Fabio Pellizzer , Michele Magistretti , Cristina Casellato , Monica Vigilante
- Applicant: Fabio Pellizzer , Michele Magistretti , Cristina Casellato , Monica Vigilante
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/IT2008/000815 WO 20081230
- International Announcement: WO2010/076827 WO 20100708
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
Public/Granted literature
- US20110248233A1 METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL Public/Granted day:2011-10-13
Information query
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