Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13431728Application Date: 2012-03-27
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Publication No.: US09111862B2Publication Date: 2015-08-18
- Inventor: Xinpeng Wang
- Applicant: Xinpeng Wang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Koppel, Patrick, Heybl & Philpott
- Agent Michael J. Ram
- Priority: CN201110131061 20110520
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor apparatus and a manufacturing method therefor is described. The semiconductor apparatus comprises a substrate and a gate structure for a N-channel semiconductor device above the substrate. A recess is formed at a lower end portion of at least one of two sides of the gate where it is adjacent to a source region and a drain region, of the N-channel semiconductor. The channel region of the N-channel semiconductor device has enhanced strain. The apparatus can further have a gate structure for a P-channel semiconductor device above the substrate.
Public/Granted literature
- US20120292699A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-11-22
Information query
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