Invention Grant
- Patent Title: Repairing method, repairing structure, and repairing system for disconnected defect
- Patent Title (中): 修复方法,修理结构和修复系统的断线缺陷
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Application No.: US13810511Application Date: 2012-12-10
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Publication No.: US09111940B2Publication Date: 2015-08-18
- Inventor: Wen-Da Cheng
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- International Application: PCT/CN2012/086295 WO 20121210
- International Announcement: WO2014/086050 WO 20140612
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L23/522

Abstract:
The present disclosure provides a repairing method, a repairing structure and a repairing system for a disconnected defect, the repairing method includes: forming a first repairing line connecting two ends of a disconnected portion of a scanning line; forming an insulation layer covering the first repairing line; and forming a second repairing line connecting two ends of a disconnected portion of a data line with the insulation layer located at an intersection of the first repairing line and the second repairing line. By forming the insulation layer between the first repairing line and the second repairing line, the present disclosure avoids the short circuit generated after the scanning line and the data line are repaired, repairs the disconnected defect at the intersection of two metal layers, improves the yield rate of the repairing of the disconnected defect, and reduces manufacturing cost.
Public/Granted literature
- US20140151903A1 REPAIRING METHOD, REPAIRING STRUCTURE, AND REPAIRING SYSTEM FOR DISCONNECTED DEFECT Public/Granted day:2014-06-05
Information query
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