Invention Grant
- Patent Title: Semiconductor device and manufacture method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14135825Application Date: 2013-12-20
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Publication No.: US09111959B2Publication Date: 2015-08-18
- Inventor: Yon Sup Pang
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2013-0068975 20130617
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/10
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well region disposed in a substrate, a gate disposed on the substrate, a halo region disposed in a channel region under the gate, and a source LDD region and a drain LDD region disposed on opposite sides of the halo region.
Public/Granted literature
- US20140367776A1 SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD THEREOF Public/Granted day:2014-12-18
Information query
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