Invention Grant
- Patent Title: Insulated gate bipolar transistor including emitter short regions
- Patent Title (中): 绝缘栅双极晶体管包括发射极短区域
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Application No.: US13850798Application Date: 2013-03-26
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Publication No.: US09111989B2Publication Date: 2015-08-18
- Inventor: Stephan Voss , Erich Griebl , Alexander Breymesser
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/74 ; H01L29/08 ; H01L29/10 ; H01L29/70
Abstract:
A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions.
Public/Granted literature
- US20140291724A1 Insulated Gate Bipolar Transistor Including Emitter Short Regions Public/Granted day:2014-10-02
Information query
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