Invention Grant
- Patent Title: Method for improving anti-radiation performance of SOI structure
- Patent Title (中): 提高SOI结构抗辐射性能的方法
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Application No.: US14364984Application Date: 2012-10-25
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Publication No.: US09111995B2Publication Date: 2015-08-18
- Inventor: Yinxue Lv , Jinshun Bi , Jiajun Luo , Zhengsheng Han , Tianchun Ye
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Osha Liang LLP
- Priority: CN201110418276 20111214
- International Application: PCT/CN2012/083474 WO 20121025
- International Announcement: WO2013/086902 WO 20130620
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/265 ; H01L21/324
Abstract:
A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.
Public/Granted literature
- US20140349463A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-11-27
Information query
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