Invention Grant
- Patent Title: Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate
- Patent Title (中): 半导体衬底，场效晶体管，集成电路以及半导体衬底的制造方法
-
Application No.: US13410872Application Date: 2012-03-02
-
Publication No.: US09112035B2Publication Date: 2015-08-18
- Inventor: Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
- Applicant: Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
- Applicant Address: JP Tokyo JP Tokyo JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,THE UNIVERSITY OF TOKYO,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,THE UNIVERSITY OF TOKYO,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-205311 20090904; JP2010-045498 20100302; JP2010-135570 20100614
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/786 ; H01L21/762 ; H01L29/49 ; H01L29/51 ; H01L29/66
Abstract:
A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.
Public/Granted literature
Information query
IPC分类:
