Memory cells which have channel-supporting material, dielectric material over the channel-supporting material, carrier-trapping material over the dielectric material and an electrically conductive electrode material over and directly against the carrier-trapping material. The carrier-trapping material includes gallium, indium, zinc and oxygen. Methods of storing utilizing a memory cell which has a channel-supporting material, a dielectric material over the channel-supporting material, a carrier-trapping material over the dielectric material, and an electrically conductive electrode material over and directly against the carrier-trapping material. The carrier-trapping material includes gallium, indium, zinc and oxygen. It is determined if carriers are trapped in the carrier-trapping material to thereby ascertain a memory state of the memory cell.