Invention Grant
US09113538B2 Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask
有权
结构电子束检查系统，用于检查极紫外线掩膜和结构，用于放电极紫外线掩膜
- Patent Title: Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask
- Patent Title (中): 结构电子束检查系统，用于检查极紫外线掩膜和结构，用于放电极紫外线掩膜
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Application No.: US14039939Application Date: 2013-09-27
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Publication No.: US09113538B2Publication Date: 2015-08-18
- Inventor: You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
- Applicant: HERMES MICROVISION, INC.
- Applicant Address: TW Hsinchu
- Assignee: HERMES MICROVISION, INC.
- Current Assignee: HERMES MICROVISION, INC.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: A61N5/00
- IPC: A61N5/00 ; H05F3/02 ; H01J37/02 ; H01J37/20 ; G01N23/225
Abstract:
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
Public/Granted literature
- US20140027634A1 STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK Public/Granted day:2014-01-30
Information query
