A patterning method includes steps of forming a first copolymer layer comprising a first diblock copolymer which has portions which are phase incompatible. The first copolymer layer is annealed to form a first phase pattern including a first phase dispersed in a second surrounding phase. The first copolymer is then etched forming a first topographic pattern that corresponds to the first phase pattern. A second copolymer layer of a second diblock copolymer is then formed over the first topographic pattern, and then annealed to generate a second phase pattern offset from the first topographic pattern. Etching is used to form a second topographic pattern corresponding to the second phase pattern. The first and second topographic patterns are then transferred to the substrate. The patterning method can be used, for example, to form patterned recording layers for magnetic storage devices.