Invention Grant
US09117519B2 Methods, devices and systems using over-reset state in a memory cell
有权
在存储器单元中使用过度复位状态的方法，设备和系统
- Patent Title: Methods, devices and systems using over-reset state in a memory cell
- Patent Title (中): 在存储器单元中使用过度复位状态的方法，设备和系统
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Application No.: US13597692Application Date: 2012-08-29
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Publication No.: US09117519B2Publication Date: 2015-08-25
- Inventor: Alessio Spessot , Paolo Fantini , Massimo Ferro
- Applicant: Alessio Spessot , Paolo Fantini , Massimo Ferro
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C13/04
- IPC: G11C13/04 ; G11C13/00 ; G11C11/56
Abstract:
Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
Public/Granted literature
- US20140063899A1 METHODS, DEVICES AND SYSTEMS USING OVER-RESET STATE IN A MEMORY CELL Public/Granted day:2014-03-06
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