Invention Grant
US09117539B2 Flash memory device reducing noise peak and program time and programming method thereof
有权
闪存器件降低噪声峰值和编程时间及其编程方法
- Patent Title: Flash memory device reducing noise peak and program time and programming method thereof
- Patent Title (中): 闪存器件降低噪声峰值和编程时间及其编程方法
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Application No.: US14303061Application Date: 2014-06-12
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Publication No.: US09117539B2Publication Date: 2015-08-25
- Inventor: Jong Cheol Lee
- Applicant: FIDELIX CO., LTD. , Nemostech Co., Ltd.
- Applicant Address: KR Seongnam-Si, Gyeonggi-Do KR Seongnam-Si, Gyeonggi-Do
- Assignee: FIDELIX CO., LTD.,NEMOSTECH CO., LTD.
- Current Assignee: FIDELIX CO., LTD.,NEMOSTECH CO., LTD.
- Current Assignee Address: KR Seongnam-Si, Gyeonggi-Do KR Seongnam-Si, Gyeonggi-Do
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2013-0104951 20130902
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C16/10 ; G06F13/28
Abstract:
A flash memory device reduces noise peak and program time through serial programming of program blocks of memory cells. The time interval or the number of the program groups is decreased according to the proceeding program loop in the plurality of program loops, reducing the total program time.
Public/Granted literature
- US20150063029A1 FLASH MEMORY DEVICE REDUCING NOISE PEAK AND PROGRAM TIME AND PROGRAMMING METHOD THEREOF Public/Granted day:2015-03-05
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