Invention Grant
- Patent Title: Auto low current programming method without verify
- Patent Title (中): 自动低电流编程方法无需验证
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Application No.: US14225202Application Date: 2014-03-25
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Publication No.: US09117549B1Publication Date: 2015-08-25
- Inventor: Sung Jin Yoo , Guowei Wang
- Applicant: Integrated Silicon Solution, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Integrated Silicon Solution, Inc.
- Current Assignee: Integrated Silicon Solution, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Van Pelt, Yi & James LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C16/28 ; G11C16/10
Abstract:
A flash memory device employs a low current auto-verification programming scheme using multi-step programming voltage and cell current detection. The low current auto-verification programming scheme performs programming of memory cells by the application of programming voltages in step increments. For each programming pulse, the cell current of the memory cell is sensed to determine when the memory cell is programmed. The programming pulse is terminated when the cell current decreases below a reference current level.
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