Invention Grant
- Patent Title: Apparatus for ESD protection
- Patent Title (中): ESD保护装置
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Application No.: US13723001Application Date: 2012-12-20
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Publication No.: US09117669B2Publication Date: 2015-08-25
- Inventor: Wun-Jie Lin , Bo-Ting Chen , Jen-Chou Tseng , Ming-Hsiang Song
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L29/861 ; H01L21/02 ; H01L27/02 ; H01L27/06

Abstract:
A structure comprises an N+ region formed over a first fin of a substrate, a P+ region formed over a second fin of the substrate, wherein the P+ region and the N+ region form a diode, a shallow trench isolation region formed between the P+ region and the N+ region and a first epitaxial growth block region formed over the shallow trench isolation region and between the N+ region and the P+ region, wherein a forward bias current of the diode flows through a path underneath the shallow trench isolation region.
Public/Granted literature
- US20140175551A1 Apparatus for ESD Protection Public/Granted day:2014-06-26
Information query
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