Invention Grant
US09117674B2 Method of selective growth without catalyst on a semiconducting structure
有权
在半导体结构上无催化剂选择性生长的方法
- Patent Title: Method of selective growth without catalyst on a semiconducting structure
- Patent Title (中): 在半导体结构上无催化剂选择性生长的方法
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Application No.: US14009305Application Date: 2012-04-03
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Publication No.: US09117674B2Publication Date: 2015-08-25
- Inventor: Joël Eymery , Damien Salomon , Xiaojun Chen , Christophe Durand
- Applicant: Joël Eymery , Damien Salomon , Xiaojun Chen , Christophe Durand
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1152926 20110405
- International Application: PCT/EP2012/056091 WO 20120403
- International Announcement: WO2012/136665 WO 20121011
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; B82Y10/00 ; B82Y40/00 ; H01L29/66 ; H01L29/775 ; H01L29/861 ; H01L33/18 ; H01L33/24 ; H01L33/38 ; B82Y30/00 ; H01L29/06
Abstract:
A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.
Public/Granted literature
- US20140080290A1 METHOD OF SELECTIVE GROWTH WITHOUT CATALYST ON A SEMICONDUCTING STRUCTURE Public/Granted day:2014-03-20
Information query
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