Invention Grant
- Patent Title: Semiconductor substrate and method for making the same
- Patent Title (中): 半导体衬底及其制造方法
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Application No.: US14303371Application Date: 2014-06-12
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Publication No.: US09117697B2Publication Date: 2015-08-25
- Inventor: Chun-Che Lee , Yuan-Chang Su , Wen-Chi Cheng , Guo-Cheng Liao , Yi-Chuan Ding
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu; Angela D. Murch
- Priority: CN201310233893 20130613
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/44 ; H01L23/00

Abstract:
The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.
Public/Granted literature
- US20140367837A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MAKING THE SAME Public/Granted day:2014-12-18
Information query
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