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US09117744B2 Methods of forming a span comprising silicon dioxide 有权
形成包含二氧化硅的跨距的方法

Methods of forming a span comprising silicon dioxide
Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
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