Invention Grant
- Patent Title: Methods of forming a span comprising silicon dioxide
- Patent Title (中): 形成包含二氧化硅的跨距的方法
-
Application No.: US13971169Application Date: 2013-08-20
-
Publication No.: US09117744B2Publication Date: 2015-08-25
- Inventor: David H. Wells
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02

Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Public/Granted literature
- US20130337630A1 Methods of Forming a Span Comprising Silicon Dioxide Public/Granted day:2013-12-19
Information query
IPC分类: