Invention Grant
- Patent Title: Mechanisms for forming stressor regions in a semiconductor device
- Patent Title (中): 在半导体器件中形成应力区域的机理
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Application No.: US14173370Application Date: 2014-02-05
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Publication No.: US09117745B2Publication Date: 2015-08-25
- Inventor: Chun Hsiung Tsai , Tsan-Chun Wang , Su-Hao Liu , Tsz-Mei Kwok , Chii-Ming Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/22 ; H01L29/32 ; H01L29/78 ; H01L21/265 ; H01L29/06 ; H01L29/08
Abstract:
A method of manufacturing a semiconductor device includes performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate. The method also includes forming a stress film over the substrate, and performing an annealing process to recrystallize the amorphized region after the stress film is formed. The method further includes forming a recess region on the substrate. The recess region overlies the recrystallized region. The method additionally includes forming an epitaxial stress-inducing material in the recess region.
Public/Granted literature
- US20140154876A1 MECHANISMS FOR FORMING STRESSOR REGIONS IN A SEMICONDUCTOR DEVICE Public/Granted day:2014-06-05
Information query
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