Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14364898Application Date: 2013-02-01
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Publication No.: US09117795B2Publication Date: 2015-08-25
- Inventor: Hideyo Nakamura , Norihiro Nashida
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2012-026346 20120209
- International Application: PCT/JP2013/000570 WO 20130201
- International Announcement: WO2013/118478 WO 20130815
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/373 ; H01L23/433 ; H01L23/498 ; H01L25/07 ; H01L23/367 ; H01L23/00 ; H01L23/31

Abstract:
A semiconductor device includes an insulating substrate with a conductive pattern including an insulating substrate, a conductive pattern formed on a front surface of the insulating substrate, and a rear heat-sink formed on a back surface of the insulating substrate; a semiconductor chip joined on the conductive pattern through joining material, and leading terminals; and a mold resin exposing a surface of the rear heat-sink and end portions of the leading terminals, and sealing a front surface of the insulating substrate with the conductive pattern, a back surface of the insulating substrate with the conductive pattern, the semiconductor chip, the rear heat-sink excluding the exposed surface thereof, and the leading terminals excluding the end portions thereof. Each of side surfaces of the conductive pattern and the rear heat-sink is formed with a recessed groove, and the recessed grooves are filled with the mold resin.
Public/Granted literature
- US20140332951A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-13
Information query
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