Invention Grant
- Patent Title: Semiconductor devices including polar insulation layer capped by non-polar insulation layer
- Patent Title (中): 半导体器件包括非极性绝缘层覆盖极性绝缘层
-
Application No.: US14027817Application Date: 2013-09-16
-
Publication No.: US09117817B2Publication Date: 2015-08-25
- Inventor: John R. Williams , Ayayi C. Ahyi , Tamara F. Isaacs-Smith , Yogesh K. Sharma , Leonard C. Feldman
- Applicant: John R. Williams , Ayayi C. Ahyi , Tamara F. Isaacs-Smith , Yogesh K. Sharma , Leonard C. Feldman
- Applicant Address: US AL Auburn US NJ New Brunswick
- Assignee: Auburn University,Rutgers, The State University of New Jersey
- Current Assignee: Auburn University,Rutgers, The State University of New Jersey
- Current Assignee Address: US AL Auburn US NJ New Brunswick
- Agency: Barnes & Thornburg LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/51 ; H01L21/04 ; H01L29/78
Abstract:
Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.
Public/Granted literature
- US20140077227A1 Semiconductor Devices Including Polar Insulation Layer Capped By Non-Polar Insulation Layer Public/Granted day:2014-03-20
Information query
IPC分类:
