Invention Grant
- Patent Title: Nanowire LED structure and method for manufacturing the same
- Patent Title (中): 纳米线LED结构及其制造方法
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Application No.: US14166308Application Date: 2014-01-28
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Publication No.: US09117990B2Publication Date: 2015-08-25
- Inventor: Truls Lowgren
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: GLO AB
- Current Assignee: GLO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/62 ; B82Y20/00 ; H01L33/18 ; H01L33/08

Abstract:
A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.
Public/Granted literature
- US20140141555A1 NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-22
Information query
IPC分类: