Invention Grant
- Patent Title: Scheme to improve the performance and reliability in high voltage IO circuits designed using low voltage devices
- Patent Title (中): 提高使用低压器件设计的高压IO电路的性能和可靠性的方案
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Application No.: US14494927Application Date: 2014-09-24
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Publication No.: US09118315B2Publication Date: 2015-08-25
- Inventor: Venkateswara Reddy P , Vinayak Ghatawade
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Charles A. Brill; Frank D. Cimino
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/003 ; H03K19/017

Abstract:
A high voltage input/output (IO) circuit designed using low voltage devices. The IO circuit receives a first bias voltage and a second bias voltage. The IO circuit includes a pre-reverse switch, a main-driver and a post-reverse switch. The pre-reverse switch includes a first capacitor and a second capacitor. The main-driver includes a first parasitic capacitance and a second parasitic capacitance. The post-reverse switch includes a third capacitor and a fourth capacitor. The first capacitor and the third capacitor counter an effect of coupling by the first parasitic capacitance on the first bias voltage and the second capacitor and the fourth capacitor counter an effect of coupling by the second parasitic capacitance on the second bias voltage.
Public/Granted literature
Information query
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