Invention Grant
US09120127B2 Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer
有权
超声波换能器结构，超声波换能器及超声波换能器的制造方法
- Patent Title: Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer
- Patent Title (中): 超声波换能器结构，超声波换能器及超声波换能器的制造方法
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Application No.: US13616285Application Date: 2012-09-14
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Publication No.: US09120127B2Publication Date: 2015-09-01
- Inventor: Byung-gil Jeong , Seog-woo Hong , Dong-kyun Kim , Seok-whan Chung , Hyung-jae Shin
- Applicant: Byung-gil Jeong , Seog-woo Hong , Dong-kyun Kim , Seok-whan Chung , Hyung-jae Shin
- Applicant Address: KR Suwon Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0145157 20111228
- Main IPC: H01L41/053
- IPC: H01L41/053 ; B06B1/02
Abstract:
An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.
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