Invention Grant
US09120265B2 Nanoimprint resist, nanoimprint mold and nanoimprint lithography
有权
纳米压印抗蚀剂,纳米压印模具和纳米压印光刻
- Patent Title: Nanoimprint resist, nanoimprint mold and nanoimprint lithography
- Patent Title (中): 纳米压印抗蚀剂,纳米压印模具和纳米压印光刻
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Application No.: US13687364Application Date: 2012-11-28
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Publication No.: US09120265B2Publication Date: 2015-09-01
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen
- Applicant: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN200910108044 20090609
- Main IPC: B29C59/02
- IPC: B29C59/02 ; B82Y10/00 ; B82Y40/00 ; C08G59/24 ; C08L63/00 ; G03F7/00

Abstract:
A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.
Public/Granted literature
- US20130087528A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY Public/Granted day:2013-04-11
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