Invention Grant
US09120288B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device
有权
图案形成方法，光化射线敏感或辐射敏感树脂组合物，抗蚀剂膜，电子器件的制备方法和电子器件
- Patent Title: Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device
- Patent Title (中): 图案形成方法，光化射线敏感或辐射敏感树脂组合物，抗蚀剂膜，电子器件的制备方法和电子器件
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Application No.: US13614672Application Date: 2012-09-13
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Publication No.: US09120288B2Publication Date: 2015-09-01
- Inventor: Hidenori Takahashi , Shuhei Yamaguchi , Shohei Kataoka , Michihiro Shirakawa , Fumihiro Yoshino , Shoichi Saitoh
- Applicant: Hidenori Takahashi , Shuhei Yamaguchi , Shohei Kataoka , Michihiro Shirakawa , Fumihiro Yoshino , Shoichi Saitoh
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-207017 20110922
- Main IPC: G03F7/027
- IPC: G03F7/027 ; G03F7/038 ; G03F7/075 ; B32B3/10 ; G03F7/039 ; G03F7/004 ; G03F7/20 ; G03F7/11 ; G03F7/32 ; G03F7/40
Abstract:
The pattern forming method of the invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit (a) represented by the following general formula (I), a compound (B) capable of generating an organic acid upon irradiation with actinic rays or radiation, and a nitrogen-containing organic compound (NA) having a group capable of leaving by the action of an acid, (ii) exposing the film, and (iii) developing the film after the exposure using a developer including an organic solvent to form a negative type pattern, in the general formula (I), R0 represents a hydrogen atom or a methyl group, and each of R1, R2, and R3 independently represents a linear or branched alkyl group.
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