Invention Grant
- Patent Title: Method for producing silicon carbide ceramic and method for producing honeycomb structure
- Patent Title (中): 碳化硅陶瓷的制造方法及蜂窝结构体的制造方法
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Application No.: US13852022Application Date: 2013-03-28
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Publication No.: US09120706B2Publication Date: 2015-09-01
- Inventor: Atsushi Kaneda , Takayuki Inoue , Tsuyoshi Watanabe
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-219510 20100929
- Main IPC: C04B35/565
- IPC: C04B35/565 ; C04B35/573 ; B01J35/04 ; C04B38/00 ; C04B111/00

Abstract:
Provided is a method for producing a silicon carbide ceramic easily and simply producing a silicon carbide ceramic having a small amount in resistivity change due to temperature change and being capable of generating heat by current application; and having a forming raw material preparing step of mixing two or more kinds of silicon carbide ceramic powders containing 4H—SiC silicon carbide crystals at respectively different content ratio to prepare a forming raw material; a forming step of forming the forming raw material into a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic being adjusted at a content ratio of 4H—SiC silicon carbide crystal to a desired value.
Public/Granted literature
- US20130207322A1 METHOD FOR PRODUCING SILICON CARBIDE CERAMIC AND METHOD FOR PRODUCING HONEYCOMB STRUCTURE Public/Granted day:2013-08-15
Information query
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