Invention Grant
- Patent Title: Sputtering method and sputtering apparatus
- Patent Title (中): 溅射方法和溅射装置
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Application No.: US12072089Application Date: 2008-02-22
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Publication No.: US09121094B2Publication Date: 2015-09-01
- Inventor: Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
- Applicant: Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2007-45836 20070226
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/18 ; C23C14/02 ; C23C14/54 ; H01L21/285 ; H01L21/768 ; H01L23/532
Abstract:
The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.
Public/Granted literature
- US20080230375A1 Sputtering method and sputtering apparatus Public/Granted day:2008-09-25
Information query
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