Invention Grant
US09121766B2 Multi pixel photo detector array of Geiger mode avalanche photodiodes
有权
Geiger模式雪崩光电二极管的多像素光电探测器阵列
- Patent Title: Multi pixel photo detector array of Geiger mode avalanche photodiodes
- Patent Title (中): Geiger模式雪崩光电二极管的多像素光电探测器阵列
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Application No.: US13233172Application Date: 2011-09-15
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Publication No.: US09121766B2Publication Date: 2015-09-01
- Inventor: Massimo Cataldo Mazzillo , Delfo Nunziato Sanfilippo , Giovanni Condorelli
- Applicant: Massimo Cataldo Mazzillo , Delfo Nunziato Sanfilippo , Giovanni Condorelli
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITVA2010A0069 20100916
- Main IPC: H01L31/107
- IPC: H01L31/107 ; G01J1/46 ; H01L27/146
Abstract:
A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.
Public/Granted literature
- US20120068050A1 MULTI PIXEL PHOTO DETECTOR ARRAY OF GEIGER MODE AVALANCHE PHOTODIODES Public/Granted day:2012-03-22
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