Invention Grant
- Patent Title: Inertial sensor
- Patent Title (中): 惯性传感器
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Application No.: US13655109Application Date: 2012-10-18
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Publication No.: US09121864B2Publication Date: 2015-09-01
- Inventor: Jong Woon Kim , Won Kyu Jeung
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2011-0121062 20111118
- Main IPC: G01P15/09
- IPC: G01P15/09 ; G01C19/56 ; G01P15/08

Abstract:
Disclosed herein is an inertial sensor. An inertial sensor according to preferred embodiments of the present invention is configured to include a membrane, a plurality of first electrodes patterned on the membrane, a plurality of piezoelectric elements patterned on the first electrodes, and a second electrode integrally formed to cover the piezoelectric elements. By the configuration, the piezoelectric element is encapsulated with the second electrode that is integrally formed to prevent water or humidity from being permeated into the piezoelectric element, thereby preventing physical properties of the piezoelectric element from being changed or preventing the piezoelectric element from being delaminated.
Public/Granted literature
- US20130125652A1 INERTIAL SENSOR Public/Granted day:2013-05-23
Information query
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