Invention Grant
- Patent Title: Apparatus and methods for de-embedding through substrate vias
- Patent Title (中): 用于通过衬底通孔去嵌入的装置和方法
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Application No.: US14332090Application Date: 2014-07-15
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Publication No.: US09121891B2Publication Date: 2015-09-01
- Inventor: Hsiao-Tsung Yen , Min-Chie Jeng , Victor Chih Yuan Chang , Chin-Wei Kuo , Yu-Ling Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L23/48

Abstract:
An apparatus for de-embedding through substrate vias is provided. The apparatus may include pads on a first side of a substrate are coupled to through vias extending through a substrate, wherein pairs of the through vias are interconnected by transmission lines of varying lengths along a second side of the substrate. The apparatus may further include pairs of pads coupled together by transmission lines of the same varying lengths. Apparatuses may include through vias surrounding a through via device under test. The surrounding through vias are connected to the through via device under test by a backside metal layer. The apparatus may further include a dummy structure having an area equal to an area of the backside metal layer.
Public/Granted literature
- US20140327005A1 Apparatus and Methods for De-Embedding Through Substrate Vias Public/Granted day:2014-11-06
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