Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14305693Application Date: 2014-06-16
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Publication No.: US09121899B2Publication Date: 2015-09-01
- Inventor: Hajime Akiyama , Akira Okada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-286342 20101222
- Main IPC: G01R31/28
- IPC: G01R31/28 ; B82Y25/00 ; G01R15/20 ; G01R33/09 ; H01F10/32

Abstract:
A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current.
Public/Granted literature
- US20140346514A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-27
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