Invention Grant
US09122168B2 Lithography method and device 有权
平版印刷方法和装置

Lithography method and device
Abstract:
Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with a small number of processing steps.
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