Invention Grant
- Patent Title: Memory devices having special mode access
- Patent Title (中): 具有特殊模式访问的存储设备
-
Application No.: US14231393Application Date: 2014-03-31
-
Publication No.: US09122420B2Publication Date: 2015-09-01
- Inventor: Theodore T. Pekny , Victor Y. Tsai
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G06F3/06 ; G06F13/16
Abstract:
A memory device includes a memory array, a special mode enable register, and a controller. When the controller receives a register write command to write first data into the special mode enable register and the memory device does so, the memory device operates in a first mode. When the controller receives a register write command to write second data into the special mode enable register and the memory device does so, the memory device operates in a second mode.
Public/Granted literature
- US20140215139A1 MEMORY DEVICES HAVING SPECIAL MODE ACCESS Public/Granted day:2014-07-31
Information query
