Invention Grant
US09122583B2 Memory controller and memory storage device and data writing method
有权
内存控制器和内存存储设备及数据写入方式
- Patent Title: Memory controller and memory storage device and data writing method
- Patent Title (中): 内存控制器和内存存储设备及数据写入方式
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Application No.: US13539484Application Date: 2012-07-01
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Publication No.: US09122583B2Publication Date: 2015-09-01
- Inventor: Kheng-Chong Tan , Lai-Hock Chua
- Applicant: Kheng-Chong Tan , Lai-Hock Chua
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW101109526A 20120320
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A data writing method for a memory storage device having physical unit unions is provided, wherein each of the physical unit unions includes upper physical units and lower physical units. The method includes partitioning the physical unit unions into a storage area including a data area and a spare area; configuring logical units for mapping to the physical unit unions of the data area; and receiving update data from a host system. The method also includes: selecting several physical unit unions from the spare area as buffer physical unit unions; writing the update data only to a part of each of the buffer physical unit unions; and moving the update data from buffer physical unit unions to the storage area by using a copy procedure. Therefore, the time of performing a write command can be shorten and the lifespan of the memory storage device can be prolonged effectively.
Public/Granted literature
- US20130254461A1 MEMORY CONTROLLER AND MEMORY STORAGE DEVICE AND DATA WRITING METHOD Public/Granted day:2013-09-26
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