Invention Grant
US09123402B2 Dynamic random access memory and boosted voltage producer therefor
有权
动态随机存取存储器和升压电压生成器
- Patent Title: Dynamic random access memory and boosted voltage producer therefor
- Patent Title (中): 动态随机存取存储器和升压电压生成器
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Application No.: US14324265Application Date: 2014-07-07
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Publication No.: US09123402B2Publication Date: 2015-09-01
- Inventor: Hong Beom Pyeon
- Applicant: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agent Daniel Hammond
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/14 ; G11C11/406 ; G11C11/4074 ; H02M3/07
Abstract:
A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode.
Public/Granted literature
- US20140321226A1 DYNAMIC RANDOM ACCESS MEMORY AND BOOSTED VOLTAGE PRODUCER THEREFOR Public/Granted day:2014-10-30
Information query
