Invention Grant
- Patent Title: Semiconductor memory apparatus including a plurality of banks and semiconductor integrated circuit including the same
- Patent Title (中): 包括多个堤的半导体存储装置和包括其的半导体集成电路
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Application No.: US13619871Application Date: 2012-09-14
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Publication No.: US09123403B2Publication Date: 2015-09-01
- Inventor: Hee Jin Byun
- Applicant: Hee Jin Byun
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0012236 20120207
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C8/04 ; G11C8/12 ; G11C7/10 ; G11C7/22
Abstract:
A semiconductor memory apparatus includes: a memory cell area including a plurality of banks each having a plurality of octet banks corresponding to a first group and a plurality of octet banks corresponding to a second group; and a control unit configured to generate a plurality of control signals to input a data signal to any one octet bank of the first group and any one octet bank of the second group with a predetermined margin.
Public/Granted literature
- US20130250712A1 SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME Public/Granted day:2013-09-26
Information query
