Invention Grant
US09123419B2 Complementary reference method for high reliability trap-type non-volatile memory
有权
高可靠性陷阱型非易失性存储器的补充参考方法
- Patent Title: Complementary reference method for high reliability trap-type non-volatile memory
- Patent Title (中): 高可靠性陷阱型非易失性存储器的补充参考方法
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Application No.: US13692503Application Date: 2012-12-03
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Publication No.: US09123419B2Publication Date: 2015-09-01
- Inventor: Nori Ogura , Tomoko Ogura , Seiki Ogura
- Applicant: Halo LSI, Inc.
- Applicant Address: US OR Hillsboro
- Assignee: Halo LSI, Inc.
- Current Assignee: Halo LSI, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Rosemary L. S. Pike
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C7/04 ; G11C11/56 ; G11C16/04 ; G11C16/10 ; G11C7/06 ; G11C7/10
Abstract:
Methods of complementary pairing of memory cells are described. These methods include two physical memory cells in a complementary pair, a complementary pair of reference cells for each erase block, and a physical complementary pair storing multiple data bits.
Public/Granted literature
- US20130094299A1 Complementary Reference Method for High Reliability Trap-Type Non-Volatile Memory Public/Granted day:2013-04-18
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