Invention Grant
- Patent Title: Racetrack memory cells with a vertical nanowire storage element
- Patent Title (中): 具有垂直纳米线存储元件的赛道记忆单元
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Application No.: US13745963Application Date: 2013-01-21
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Publication No.: US09123421B2Publication Date: 2015-09-01
- Inventor: Anthony J. Annunziata
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C19/00
- IPC: G11C19/00 ; G11C19/08 ; H01L43/12 ; G11C19/02 ; H01L49/02 ; H01L43/08 ; G11C11/15
Abstract:
A racetrack memory cell device include a dielectric, an electrode disposed in the dielectric, a metal strap disposed in the dielectric, a nanowire disposed in the dielectric between the electrode and the metal strap and a magnetic tunnel junction disposed in the dielectric on the metal strap, and axially with the nanowire.
Public/Granted literature
- US20140204647A1 RACETRACK MEMORY CELLS WITH A VERTICAL NANOWIRE STORAGE ELEMENT Public/Granted day:2014-07-24
Information query
