Invention Grant
US09123424B2 Optimizing pass voltage and initial program voltage based on performance of non-volatile memory
有权
基于非易失性存储器的性能优化通过电压和初始编程电压
- Patent Title: Optimizing pass voltage and initial program voltage based on performance of non-volatile memory
- Patent Title (中): 基于非易失性存储器的性能优化通过电压和初始编程电压
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Application No.: US14108677Application Date: 2013-12-17
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Publication No.: US09123424B2Publication Date: 2015-09-01
- Inventor: Ken Oowada , Shota Murai
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10

Abstract:
A programming techniques adaptively sets a pass voltage and an initial program voltage based on a programming speed of a set of memory cells. In one pass of a multi-pass programming operation, a programming speed-indicating program voltage is obtained. For example, this can be a final program voltage or a program voltage at another programming milestone. A pass voltage is determined for another programming pass of the multi-pass programming operation, by providing an adjustment to a reference pass voltage. An initial program voltage is determined for the another programming pass based on an offset from the programming speed-indicating program voltage. The initial program voltage is further adjusted to counteract an effect of the adjustment to a reference pass voltage. The adjustment to the initial program voltage is opposite in polarity and smaller in magnitude than the adjustment to the reference pass voltage.
Public/Granted literature
- US20150170746A1 Optimizing Pass Voltage And Initial Program Voltage Based On Performance Of Non-Volatile Memory Public/Granted day:2015-06-18
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