An electronic circuit and a method for driving data writes to an SRAM bit cell in an electronic circuit. The electronic circuit translates a first write signal in a lower voltage domain to a second write signal in a higher voltage domain. Based, at least in part, on the second write signal, the electronic circuit controls a discharge of a voltage of a data write line to a ground voltage level. The electronic circuit provides a negative voltage boost to the data write line after the voltage of the data write line has been discharged to reach or exceed a threshold value relative to the ground voltage level.