Invention Grant
US09123440B2 Non-volatile semiconductor memory device and method of improving reliability using soft erasing operations
有权
非易失性半导体存储器件及使用软擦除操作提高可靠性的方法
- Patent Title: Non-volatile semiconductor memory device and method of improving reliability using soft erasing operations
- Patent Title (中): 非易失性半导体存储器件及使用软擦除操作提高可靠性的方法
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Application No.: US13717285Application Date: 2012-12-17
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Publication No.: US09123440B2Publication Date: 2015-09-01
- Inventor: Se Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0093182 20120824
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C7/00 ; G11C16/04 ; G11C16/34
Abstract:
A method of operating a semiconductor memory device, given the case where memory cells have an erase state less than a first reference voltage and a plurality of program states greater than the first reference voltage, includes performing an erase operation so that the memory cells have a soft erase state less than a second reference voltage, and performing a program operation so that each of the memory cells has the soft erase state or one program state greater than the second reference voltage.
Public/Granted literature
- US20140056091A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2014-02-27
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