A method for testing a memory device. The method can include coupling the memory device to a test apparatus and determining whether each of the memory cells in the memory device is within a first specification range. Each of the cells that fall outside of the first range can be identified. Each of the cells that meet the second specification range can be tested. The method can include selecting a tile associated with a highest number of cells that fall outside of the second range. A resource can then be used to repair each of the cells that fall outside of the second range for a tile associated with a fewer number of cells that fall outside of the second range such that a first number of tiles meets the first range and a second number of tiles meets the second range such that the first number the second number.