Invention Grant
- Patent Title: Process kit for RF physical vapor deposition
- Patent Title (中): 射频物理气相沉积工艺套件
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Application No.: US12433315Application Date: 2009-04-30
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Publication No.: US09123511B2Publication Date: 2015-09-01
- Inventor: Donny Young , Lara Hawrylchak
- Applicant: Donny Young , Lara Hawrylchak
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C14/35
- IPC: C23C14/35 ; H01J37/32 ; H01J37/34

Abstract:
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
Public/Granted literature
- US20090272647A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION Public/Granted day:2009-11-05
Information query
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