Invention Grant
- Patent Title: Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
- Patent Title (中): 半导体基板的再加工方法，再加工半导体基板的制造方法以及SOI基板的制造方法
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Application No.: US13523011Application Date: 2012-06-14
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Publication No.: US09123529B2Publication Date: 2015-09-01
- Inventor: Kazuya Hanaoka , Shunsuke Kimura
- Applicant: Kazuya Hanaoka , Shunsuke Kimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-137283 20110621
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/306 ; H01L21/3105 ; H01L21/311 ; H01L21/762
Abstract:
A method suitable to reprocess a semiconductor substrate is provided. A semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer is provided in a peripheral portion of the semiconductor substrate is subjected to etching treatment for removing the insulating layer and to etching treatment for removing the damaged semiconductor region selectively with a non-damaged semiconductor region left using a mixed solution including nitric acid, a substance dissolving a semiconductor material included in the semiconductor substrate and oxidized by the nitric acid, a substance controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, and nitrous acid, in which the concentration of the nitrous acid is higher than or equal to 10 mg/l and lower than or equal to 1000 mg/l. Through these steps, the semiconductor substrate is reprocessed.
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