Invention Grant
- Patent Title: Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus
- Patent Title (中): 制造半导体器件，半导体器件和衬底处理设备的方法
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Application No.: US14248961Application Date: 2014-04-09
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Publication No.: US09123531B2Publication Date: 2015-09-01
- Inventor: Norikazu Mizuno , Tomohide Kato , Takaaki Noda
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-261571 20101124
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L21/02 ; C23C16/40 ; C23C16/455 ; C23C16/52 ; H01L27/146 ; H01L31/0232
Abstract:
An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
Public/Granted literature
- US20140220789A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2014-08-07
Information query
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