Invention Grant
US09123533B2 Method and system for in-situ etch and regrowth in gallium nitride based devices
有权
在氮化镓基器件中原位蚀刻和再生长的方法和系统
- Patent Title: Method and system for in-situ etch and regrowth in gallium nitride based devices
- Patent Title (中): 在氮化镓基器件中原位蚀刻和再生长的方法和系统
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Application No.: US13571743Application Date: 2012-08-10
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Publication No.: US09123533B2Publication Date: 2015-09-01
- Inventor: David P. Bour , Thomas R. Prunty , Hui Nie , Madhan M. Raj
- Applicant: David P. Bour , Thomas R. Prunty , Hui Nie , Madhan M. Raj
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/20
Abstract:
A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.
Public/Granted literature
- US20140045306A1 METHOD AND SYSTEM FOR IN-SITU AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES Public/Granted day:2014-02-13
Information query
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