Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14297464Application Date: 2014-06-05
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Publication No.: US09123534B2Publication Date: 2015-09-01
- Inventor: Keiichi Yui , Ken Nakata , Tsuyoshi Kouchi , Isao Makabe
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Trent B. Ostler
- Priority: JP2013-121079 20130607
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/43 ; H01L29/66 ; H01L29/778 ; H01L29/20
Abstract:
A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer.
Public/Granted literature
- US20140361308A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-12-11
Information query
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